Nonvolatile memory devices and memory systems

ABSTRACT

A nonvolatile memory device includes a memory cell array, a voltage generator, a page buffer circuit, a row decoder and a control circuit. The memory cell array includes a plurality of mats corresponding to different bit-lines. The voltage generator generates word-line voltages applied to the memory cell array. The page buffer circuit is coupled to the memory cell array through bit-lines. The row decoder is coupled to the memory cell array through word-lines, and the row decoder transfers the word-line voltages to the memory cell array. The control circuit controls the voltage generator, the row decoder and the page buffer circuit based on a command and an address. The control circuit selects a voltage between different voltages to apply the selected different voltages to at least one of the word-lines or at least one of the bit-lines according to a number of mats of the plurality mats, which operate simultaneously.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. Non-provisional application claims priority under 35 USC § 119to Korean Patent Application No. 10-2016-0099219, filed on Aug. 4, 2016,in the Korean Intellectual Property Office (KIPO), the disclosure ofwhich is incorporated by reference in its entirety herein.

BACKGROUND 1. Technical Field

Exemplary embodiments relate generally to semiconductor memory devices,and more particularly to nonvolatile memory devices and memory systems.

2. Discussion of the Related Art

Semiconductor memory devices may be typically classified into volatilesemiconductor memory devices and nonvolatile semiconductor memorydevices. Volatile semiconductor memory devices may perform read andwrite operations at a high speed, while contents stored therein may belost when the devices are powered-off. Nonvolatile semiconductor memorydevices may retain contents stored therein even when powered-off. Forthis reason, nonvolatile semiconductor memory devices may be used tostore contents to be retained regardless of whether the devices arepowered on or off.

Nonvolatile semiconductor memory devices may include a mask read-onlymemory (MROM), a programmable ROM (PROM), an erasable programmable ROM(EPROM), an electrically erasable programmable ROM (EEPROM), etc.

A flash memory device may be a typical nonvolatile memory device. Aflash memory device may be widely used as the voice and image storingmedia of electronic apparatuses such as a computer, a cellular phone, aPDA, a digital camera, a camcorder, a voice recorder, an MP3 player, ahandheld PC, a game machine, a facsimile, a scanner, a printer, etc. Forimproving the performance of read/write operation of flash memorydevices, flash memory devices may operate in a multi-plane mode.However, it is desired to reduce a load of word-lines or bit-lines ofthe flash memory devices operating in the multi-plane mode.

SUMMARY

Some exemplary embodiments are directed to a nonvolatile memory device,capable of enhancing performance.

Some exemplary embodiments are directed to provide a memory system,capable of enhancing performance.

According to exemplary embodiments, a nonvolatile memory device includesa memory cell array, a voltage generator, a page buffer circuit, a rowdecoder and a control circuit. The memory cell array includes aplurality of mats corresponding to different bit-lines, and each of theplurality mats includes a plurality of memory blocks. Each of theplurality of memory blocks includes a plurality of cell stringsconnected to a plurality of word-lines and a plurality of bit-lines. Thevoltage generator generates word-line voltages applied to the memorycell array. The page buffer circuit is coupled to the memory cell arraythrough the bit-lines and provides bit-line voltages to the bit-lines.The row decoder is coupled to the memory cell array through word-lines,and the row decoder transfers the word-line voltages to the plurality ofword-lines of the memory cell array. The control circuit controls thevoltage generator, the row decoder and the page buffer circuit based ona command and an address. The control circuit selects different voltagesto apply the selected different voltages to at least one of theword-lines or at least one of the bit-lines according to a number ofmats of the plurality mats, which operate simultaneously.

According to exemplary embodiments, a nonvolatile memory device includesa memory cell array, a voltage generator, a page buffer circuit, a rowdecoder and a control circuit. The memory cell array includes aplurality of mats corresponding to different bit-lines, and each of theplurality mats includes a plurality of memory blocks. Each of theplurality of memory blocks includes a plurality of cell stringsconnected to a plurality of word-lines and a plurality of bit-lines. Thevoltage generator generates word-line voltages applied to the memorycell array. The page buffer circuit is coupled to the memory cell arraythrough the bit-lines and provides bit-line voltages to the bit-lines.The row decoder is coupled to the memory cell array through word-lines,and the row decoder transfers the word-line voltages to the plurality ofword-lines of the memory cell array. The control circuit controls thevoltage generator, the row decoder and the page buffer circuit based ona command and an address. The control circuit applies voltages to atleast one of the word-lines or at least one of the bit-lines during aselected time interval from among a plurality of different timeintervals, the selected time interval selected according to a number ofmats of the plurality mats, which operate simultaneously.

According to exemplary embodiments, a memory system includes at leastone nonvolatile memory device and a memory controller. The memorycontroller controls the at least one nonvolatile memory device. Thenonvolatile memory device includes a memory cell array, a voltagegenerator, a page buffer circuit, a row decoder and a control circuit.The memory cell array includes a plurality of mats corresponding todifferent bit-lines, and each of the plurality mats includes a pluralityof memory blocks. Each of the plurality of memory blocks includes aplurality of cell strings connected to a plurality of word-lines and aplurality of bit-lines. The voltage generator generates word-linevoltages applied to the memory cell array. The page buffer circuit iscoupled to the memory cell array through the bit-lines. The row decoderis coupled to the memory cell array through word-lines, and the rowdecoder transfers the word-line voltages to the plurality of word-linesof the memory cell array. The control circuit controls the voltagegenerator, the row decoder and the page buffer circuit based on acommand and an address from the memory controller. The control circuitapplies different voltages to at least one of the word-lines or at leastone of the bit-lines or controls a time interval during which voltagesapplied to at least one of the word-lines or at least one of thebit-lines are applied according to a number of mats of the pluralitymats, which operate simultaneously. The memory controller includes adecision circuit to determine the number of the mats which operatesimultaneously.

According to exemplary embodiments, a nonvolatile memory device includesa memory cell array including a plurality of planes, each of first andsecond planes of the planes including a plurality of memory blocks, eachof the memory blocks including a plurality of cell strings, a first cellstring of the cell strings of the first plane connected to a first setof word-lines and a first bit-line, and a second cell string of the cellstrings of the second plane connected to a second set of word-lines anda second bit-line, a voltage generator connected to the first and secondsets of word-lines and configured to provide word-line voltages to atleast one set of the first and second sets of word-lines, and a controlcircuit configured to control at least one of the word-line voltagesapplied to at least one word-line of the first and second sets ofword-lines based on whether one or both planes of the first and secondplanes operate simultaneously. The control circuit is configured tocontrol the word-line voltages by: either applying a first voltage, fora first specific period of time, to at least one word-line of theplurality of first and second word-lines when only one of the first andsecond planes operates and applying a second voltage different from thefirst voltage, for the first specific period of time, to the at leastone word-line when both of the first and second planes simultaneouslyoperate, or applying a first voltage to at least one word-line of theplurality of first and second word-lines for a first period of time whenonly one of the first and second planes operates and applying the firstvoltage to the at least one word-line for a second period of timedifferent from the first period of time when both of the first andsecond planes simultaneously operate.

Accordingly, in a nonvolatile memory device and a memory systemaccording to exemplary embodiments, levels or application time intervalsof the voltages applied to the memory cell array are differentiated in asingle mat mode and a multi-mat mode, and performance in both the singlemat mode and the multi-mat mode may be enhanced.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting exemplary embodiments will be more clearlyunderstood from the following detailed description in conjunction withthe accompanying drawings.

FIG. 1 is a block diagram illustrating a memory system according toexemplary embodiments.

FIG. 2 is a table illustrating control signals in the memory system ofFIG. 1.

FIG. 3 is a block diagram illustrating the nonvolatile memory device inthe memory system of FIG. 1 according to exemplary embodiments.

FIG. 4 is a block diagram illustrating the memory cell array in FIG. 3according to exemplary embodiments.

FIG. 5 is a perspective view illustrating one of the memory blocks ofFIG. 4 according to exemplary embodiments.

FIG. 6 is a circuit diagram illustrating a mat configuration in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

FIG. 7 is a block diagram illustrating the control circuit in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

FIG. 8 is a block diagram illustrating the voltage generator in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

FIG. 9 is a block diagram illustrating a row decoder in the nonvolatilememory device of FIG. 3 according to exemplary embodiments.

FIGS. 10 and 11 illustrate the word-line voltages or the bit-linevoltages in the single mat mode and the multi-mat mode respectively,according to exemplary embodiments.

FIG. 12 illustrates the nonvolatile memory device of FIG. 3 according toexemplary embodiments.

FIG. 13 is a timing diagram illustrating the word-line voltages and thebit-line voltages applied to the first and second mats in the single matmode and the multi-mat mode in FIG. 6 when a read operation is performedon the nonvolatile memory device of FIG. 3, according to exemplaryembodiments.

FIG. 14 illustrates that one of the word-line voltages or one of thebit-line voltages in the single mat mode is over-driven in the multi-matmode, according to exemplary embodiments.

FIG. 15 is a table illustrating setting values of levels and applicationtime interval of the word-line voltages and the bit-line voltagesapplied to the first second mats in FIGS. 13 and 14 when a readoperation is performed on the nonvolatile memory device of FIG. 3.,according to exemplary embodiments

FIG. 16 is a timing diagram illustrating the word-line voltages and thebit-line voltages applied to the first and second mats in the single matmode and the multi-mat mode in FIG. 6 when a program operation isperformed on the nonvolatile memory device of FIG. 3, according toexemplary embodiments.

FIG. 17 is a table illustrating setting values of levels and applicationtime interval of the word-line voltages and the bit-line voltagesapplied to the first second mats in FIG. 16 when the program operationis performed on the nonvolatile memory device of FIG. 3, according toexemplary embodiments.

FIG. 18 is a block diagram illustrating a memory system according toexemplary embodiments.

FIG. 19 is a flow chart illustrating a method of nonvolatile memorydevice according to exemplary embodiments.

FIG. 20 is a block diagram illustrating a solid state disk or solidstate drive (SSD) according to exemplary embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Various exemplary embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exemplaryembodiments are shown.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. Unless indicated otherwise, these termsare generally used to distinguish one element from another. Thus, afirst element discussed below in one section of the specification couldbe termed a second element in a different section of the specificationwithout departing from the teachings of the present disclosure. Also,terms such as “first” and “second” may be used in the claims to name anelement of the claim, even thought that particular name is not used todescribe in connection with the element in the specification. As usedherein, the term “and/or” includes any and all combinations of one ormore of the associated listed items. Expressions such as that, althoughthe terms first, second, third etc. may be used herein to describevarious elements, these elements should elements of the list.

Expressions such as “at least one of,” when preceding a list ofelements, modify the entire list of elements and do not modify theindividual elements of the list.

FIG. 1 is a block diagram illustrating a memory system according toexemplary embodiments.

Referring to FIG. 1, a memory system (or, a nonvolatile memory system)10 may include a memory controller 20 and at least one nonvolatilememory device 30.

The memory system 10 may include data storage media based flash memorysuch as a memory card, a universal serial bus (USB) memory and solidstate drive (SSD).

The nonvolatile memory device 30 may perform a read operation, an eraseoperation, and a program operation or a write operation under control ofthe memory controller 20. The nonvolatile memory device 30 receives acommand CMD, an address ADDR and data DATA through input/output linesfrom the memory controller 20 for performing such operations. Inaddition, the nonvolatile memory device 30 receives a control signalCTRL through a control line from the memory controller 20. Thenonvolatile memory device 30 receives a power PWR through a power linefrom the memory controller 20.

The nonvolatile memory device 30 may include a memory cell array 100 anda decision circuit 520. The memory cell array 100 may include at least afirst mat MAT1 and a second mat MAT2. Each of the first mat MAT1 and thesecond mat MAT2 may include a plurality of memory blocks. Each block ofthe plurality of memory blocks may include a plurality of cell stringseach cell string including a plurality of transistors connected to aplurality of word-lines and a plurality of bit-lines. The first mat MAT1may be referred to as a first plane PLANE1 and the second mat MAT2 maybe referred to as a second plane PLANE2. The decision circuit 520 maydetermine one of a single mat mode and a multi-mat mode of the first matMAT1 and the second mat MAT2.

FIG. 2 is a table illustrating control signals in the memory system ofFIG. 1.

Referring to FIGS. 1 and 2, the control signal CTRL, which the memorycontroller 20 applies to the nonvolatile memory device 30, may include,a command latch enable signal CLE, an address latch enable signal ALE, achip enable signal nCE, a read enable signal nRE, and a write enablesignal nWE.

The memory controller 20 may transmit the command latch enable signalCLE to the nonvolatile memory device 30. For example, the memorycontroller 20 may transmit the command latch enable signal CLE to thenonvolatile memory device 30 via a separately assigned control pin. Thecommand latch enable signal CLE may be a signal indicating thatinformation transferred via the input/output lines is a command.

The memory controller 20 may transmit the address latch enable signalALE to the nonvolatile memory device 30. The memory controller 20 maytransmit the address latch enable signal ALE to the nonvolatile memorydevice 30 via a separately assigned control pin. The address latchenable signal ALE may be a signal indicating that informationtransferred via the input/output lines is an address.

The memory controller 20 may transmit the chip enable signal nCE to thenonvolatile memory device 30. The memory controller 20 may transmit thechip enable signal nCE to the nonvolatile memory device 30 via aseparately assigned control pin. The chip enable signal nCE may indicatea memory chip selected from among a plurality of memory chips when thenonvolatile memory device includes the plurality of memory chips. Forexample, the chip enable signal nCE may include one or more chip enablesignals nCEs.

The memory controller 20 may transmit the read enable signal nRE to thenonvolatile memory device 30. The memory controller 20 may transmit theread enable signal nRE to the nonvolatile memory device 30 via aseparately assigned control pin. The nonvolatile memory device 30 maytransmit read data to the memory controller 20 based on the read enablesignal nRE.

The memory controller 20 may transmit the write enable signal nWE to thenonvolatile memory device 30. The memory controller 20 may transmit thewrite enable signal nWE to the nonvolatile memory device 30 via aseparately assigned control pin. When the write enable signal nWE isactivated, the nonvolatile memory device 30 may store data input signalsprovided from the memory controller 20 to the memory cell array 100 ofthe nonvolatile memory device 30.

FIG. 3 is a block diagram illustrating the nonvolatile memory device inthe memory system of FIG. 1 according to exemplary embodiments.

Referring to FIG. 3, the nonvolatile memory device 30 includes a memorycell array 100, a row decoder 600, a page buffer circuit 410, a datainput/output circuit 420, a control circuit 500, and a voltage generator700 (e.g., a word-line voltage generator). The control circuit 500 mayinclude the decision circuit 520.

The memory cell array 100 may be coupled to the row decoder 600 througha string selection line SSL, a plurality of word-lines WLs, and a groundselection line GSL. In addition, the memory cell array 100 may becoupled to the page buffer circuit 410 through a plurality of bit-linesBLs.

The memory cell array 100 may include a plurality of memory cellscoupled to the plurality of word-lines WLs and the plurality ofbit-lines BLs.

In some exemplary embodiments, the memory cell array 100 may be athree-dimensional memory cell array, which is formed on a substrate in athree-dimensional structure (or a vertical structure). In this case, thememory cell array 100 may include vertical cell strings that arevertically oriented such that at least one memory cell is located overanother memory cell. The following patent documents, which are herebyincorporated by reference, describe suitable configurations forthree-dimensional memory cell arrays: U.S. Pat. Nos. 7,679,133;8,553,466; 8,654,587; 8,559,235; and US Pat. Pub. No. 2011/0233648.

In other exemplary embodiments, the memory cell array 100 may be atwo-dimensional memory cell array, which is formed on a substrate in atwo-dimensional structure (or a horizontal structure).

Referring still to FIG. 3, the row decoder 600 may select at least oneof a plurality of memory blocks of the plurality of mats of the cellarray 100 in response to an address ADDR from the memory controller 20.For example, the row decoder 600 may select at least one of a pluralityof word-lines in the selected one or more memory blocks. The row decoder600 may transfer a voltage (e.g., a word-line voltage) generated fromthe voltage generator 700 to a selected word-line. At a programoperation, the row decoder 600 may transfer a program voltage or averification voltage to a selected word-line and a pass voltage to anunselected word-line. At a read operation, the row decoder 600 maytransfer a selection read voltage to a selected word-line and anon-selection read voltage to an unselected word-line.

The page buffer circuit 410 may operate as a write driver at a programoperation and a sense amplifier at a read operation. At a programoperation, the page buffer circuit 410 may provide a bit-line of thememory cell array 100 with a bit-line voltage corresponding to data tobe programmed. At a read or verification read operation, the page buffercircuit 410 may sense data stored in a selected memory cell via abit-line. The page buffer circuit 410 may include a plurality of pagebuffers PB1 to PBn each connected with one bit-line or two bit-lines.

The control circuit 500 may generate a plurality of control signalsCTLs, a first control signal LTC1, and a second control signal LTC2based on the command signal CMD. The control circuit 500 may alsogenerate a row address R_ADDR and a column address C_ADDR based on theaddress signal ADDR. A detailed description for the control circuit 500will be described later.

In example embodiments, the nonvolatile memory device 30 may furtherinclude a voltage generator (not shown) for supplying a variable voltageto a selected bit-line of the memory cell array 100 through the pagebuffer circuit 410. In other example embodiments, the page buffercircuit 410 may include the voltage generator (not shown) applying avariable voltage to a selected bit-line of the memory cell array 100.

FIG. 4 is a block diagram illustrating the memory cell array in FIG. 3according to exemplary embodiments.

Referring to FIG. 4, the memory cell array 100 may include a pluralityof memory blocks BLK1 to BLKz which extend in a plurality of directionsD1, D2 and D3. In particular, each of the first mat MAT1 (or the firstplane PLANE1) and the second mat MAT2 (or the second plane PLANE2) mayinclude the plurality of memory blocks BLK1 to BLKz. In an embodiment,the memory blocks BLK1 to BLKz are selected by the row decoder 600 inFIG. 3. For one example, the row decoder 600 may select a particularmemory block BLK corresponding to a block address among the memoryblocks BLK1 to BLKz of one of the first and second mats MAT1 and MAT2.For another example, the row decoder 600 may select two particularmemory blocks BLKs corresponding to a block address among the memoryblocks BLK1 to BLKz of each of the first and second mats MAT1 and MAT2.

FIG. 5 is a perspective view illustrating one of the memory blocks ofFIG. 4 according to exemplary embodiments.

Referring to FIG. 5, a memory block BLKi includes structures extendingalong the first to third directions D1˜D3.

A substrate 111 is provided. For example, the substrate 111 may have awell of a first type (e.g., a first conductive type). For example, thesubstrate 111 may have a p-well formed by implanting a group 3 elementsuch as boron (B). For example, the substrate 111 may have a pocketp-well provided in an n-well. In an embodiment, the substrate 111 has ap-type well (or a p-type pocket well). However, the conductive type ofthe substrate 111 is not limited to the p-type.

A plurality of doping regions 311 to 314 extending along the firstdirection D1 are provided in/on the substrate 111. For example, theplurality of doping regions 311 to 314 may have a second type (e.g., asecond conductive type) different from the first type of the substrate111. In an embodiment, the first to fourth doping regions 311 to 314have an n-type. However, the conductive type of the first to fourthdoping regions 311 to 314 is not limited to the n-type.

A plurality of insulation materials 112 extending along the seconddirection D2 are sequentially provided along the third direction D3 on aregion of the substrate 111 between the first and second doping regions311 and 312. For example, the plurality of insulation materials 112 areprovided along the third direction D3, being spaced by a specificdistance. Exemplarily, the insulation materials 112 may include aninsulation material such as an oxide layer.

A plurality of pillars 113 penetrating the insulation materials alongthe third direction D3 are sequentially disposed along the seconddirection D2 on a region of the substrate 111 between the first andsecond doping regions 311 and 312. For example, the plurality of pillars113 penetrate the insulation materials 112 to contact the substrate 111.

For example, each pillar 113 may include a plurality of materials. Forexample, a channel layer 114 of each pillar 113 may include a siliconmaterial having a first type. For example, the channel layer 114 of eachpillar 113 may include a silicon material having the same type as thesubstrate 111. In an embodiment, the channel layer 114 of each pillar113 includes a p-type silicon. However, the channel layer 114 of eachpillar 113 is not limited to the p-type silicon.

An internal material 115 of each pillar 113 includes an insulationmaterial. For example, the internal material 115 of each pillar 113 mayinclude an insulation material such as a silicon oxide. For example, theinner material 115 of each pillar 113 may include an air gap.

An insulation layer 116 is provided along the exposed surfaces of theinsulation materials 112, the pillars 113, and the substrate 111, on aregion between the first and second doping regions 311 and 312.Exemplarily, the insulation layer 116 provided on the exposed surface inthe third direction D3 of the last insulation material 112 may beremoved.

A plurality of first conductive materials 211 to 291 is provided betweensecond doping regions 311 and 312 on the exposed surfaces of theinsulation layer 116. For example, the first conductive material 211extending along the second direction D2 is provided between thesubstrate 111 and the insulation material 112 adjacent to the substrate111.

A first conductive material extending along the first direction D1 isprovided between the insulation layer 116 at the top of a specificinsulation material among the insulation materials 112 and theinsulation layer 116 at the bottom of a specific insulation materialamong the insulation materials 112. For example, a plurality of firstconductive materials 221 to 281 extending along the first direction D1are provided between the insulation materials 112 and it may beunderstood that the insulation layer 116 is provided between theinsulation materials 112 and the first conductive materials 221 to 281.The first conductive materials 211 to 291 may include a metal material.The first conductive materials 211 to 291 may include a conductivematerial such as a polysilicon.

The same structures as those on the first and second doping regions 311and 312 may be provided in a region between the second and third dopingregions 312 and 313. In the region between the second and third dopingregions 312 and 313, provided are a plurality of insulation materials112 extending along the first direction D1, a plurality of pillars 113disposed sequentially along the first direction D1 and penetrating theplurality of insulation materials 112 along the third direction D3, aninsulation layer 116 provided on the exposed surfaces of the pluralityof insulation materials 112 and the plurality of pillars 113, and aplurality of conductive materials 213 to 293 extending along the firstdirection D1.

In a region between the third and fourth doping regions 313 and 314, thesame structures as those on the first and second doping regions 311 and312 may be provided. In the region between the third and fourth dopingregions 313 and 314, provided are a plurality of insulation materials112 extending along the first direction D1, a plurality of pillars 113disposed sequentially along the first direction D1 and penetrating theplurality of insulation materials 112 along the third direction D3, aninsulation layer 116 provided on the exposed surfaces of the pluralityof insulation materials 112 and the plurality of pillars 113, and aplurality of first conductive materials 213 to 293 extending along thefirst direction D1.

Drains 320 are provided on the plurality of pillars 113, respectively.The drains 320 may include silicon materials doped with a second type.For example, the drains 320 may include silicon materials doped with ann-type. In an embodiment, the drains 320 include n-type siliconmaterials. However, the drains 320 are not limited to the n-type siliconmaterials.

On the drains, the second conductive materials 331 to 333 extendingalong the first direction D1 are provided. The second conductivematerials 331 to 333 are disposed along the second direction D2, beingspaced by a specific distance. The second conductive materials 331 to333 are respectively connected to the drains 320 in a correspondingregion. The drains 320 and the second conductive material 333 extendingalong the first direction D1 may be connected through each contact plug.The second conductive materials 331 to 333 may include metal materials.The second conductive materials 331 to 333 may include conductivematerials such as a polysilicon.

In example embodiments, each of the first conductive materials 211 to291 may form a word-line or a selection line SSL/GSL. The firstconductive materials 221 to 281 may be used as word-lines, and firstconductive materials formed at the same layer may be interconnected. Thememory block BLKi may be selected when the first conductive materials211 to 291 all are selected. On the other hand, a sub-block may beselected by selecting a part of the first conductive materials 211 to291.

The number of layers at which first conductive materials 211 to 291 areformed may not be limited to this disclosure. It is well understood thatthe number of layers at which the first conductive materials 211 to 291are formed is changed according to a process technique and a controltechnique.

In example embodiments, each of the second conductive materials 331 to333 may form a bit-line and each of the doping regions 311 to 314 mayform a common source line of the cell strings.

FIG. 6 is a circuit diagram illustrating a mat configuration in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

Referring to FIG. 6, a memory cell array 100 b including first andsecond mats MAT1 and MAT2 is illustrated. Each of the first and secondmats MAT1 and MAT2 includes a plurality of memory blocks, and each ofthe memory blocks includes a plurality of cell strings. For example, amemory block of the first mat MAT1 includes a plurality of cell stringsCS11, CS12, CS21, and CS22. The plurality of cell strings in a mat maybe formed in a plane. Each of the first and second mats MAT1 and MAT2includes a plurality of memory blocks, and one of the memory blocks hasmultiple string selection lines SSL1 a and SSL1 b to select at least oneof the cell strings CS11, CS12, CS21, and CS22. For example, when aselection voltage is applied to a first string selection line SSL1 a,the first and second cell strings CS11 and CS12 may be selected. When aselection voltage is applied to a second string selection line SSL1 b,third and fourth cell strings CS21 and CS22 may be selected.

In some embodiments, the first and second mats MAT1 and MAT2 may havethe same physical structure. For example, like the first mat MAT1, thesecond mat MAT2 may include multiple memory blocks and multiple cellstrings formed in a memory block of the multiple memory blocks. Also,the second mat MAT2 may include multiple string selection lines SSL2 aand SSL2 b to select at least one of multiple cell strings.

Each of the first and second mats MAT1 and MAT2 may be coupled tocorresponding word-lines and a common source line. The cell strings inthe first mat MAT1 may be coupled to word-lines WL11˜WL16, a groundselection line GSL1 and a common source line CSL1. The cell strings inthe second mat MAT2 may be coupled to word-lines WL21˜WL26, a groundselection line GSL2 and a common source line CSL2.

The first and second mats MAT1 and MAT2 do not share bit-lines. Firstbit-lines BL1 and BL1 a are coupled to the first mat MAT1 exclusively.Second bit-lines BL2 and BL2 a are coupled to the second mat MAT2exclusively.

Although FIG. 6 illustrates an example in which each mat is connectedwith two bit-lines and six word-lines, the inventive concept is notlimited to these features. For example, each mat can be connected withthree or more bit-lines and seven or more word-lines.

Each cell string may include at least one string selection transistor,memory cells, and at least one ground selection transistor. For example,a cell string CS31 of the second mat MAT2 may include a ground selectiontransistor GST, multiple memory cells MC1 to MC6, and a string selectiontransistor SST sequentially being perpendicular to a substrate. Theremaining cell strings may be formed substantially the same as the cellstring CS31.

The first and second mats MAT1 and MAT2 include independent stringselection lines. For example, string selection lines SSL1 a and SSL1 bare only connected with the first mat MAT1, and string selection linesSSL2 a and SSL2 b are only connected with the second mat MAT2. A stringselection line may be used to select cell strings only in a mat. Also,cell strings may be independently selected in every mat by controllingthe string selection lines independently.

For example, cell strings CS11 and CS12 may be independently selected byapplying a selection voltage only to first string selection line SSL1 a.When the selection voltage is applied to first string selection lineSSL1 a, string selection transistors of cell strings CS11 and CS12corresponding to first string selection line SSL1 a may be turned on bythe selection voltage. At this time, memory cells of the cell stringsCS11 and CS12 may be electrically connected with a bit-line. When anon-selection voltage is applied to first string selection line SSL1 a,string selection transistors of cell strings CS11 and CS12 correspondingto first string selection line SSL1 a are turned off by thenon-selection voltage. At this time, memory cells of the cell stringsCS11 and CS12 are electrically isolated from a bit-line.

Referring back to FIG. 3, the control circuit 500 may receive a command(signal) CMD and an address (signal) ADDR from the memory controller 20and control an erase loop, a program loop and a read operation of thenonvolatile memory device 30 based on the command signal CMD and theaddress signal ADDR. The program loop may include a program operationand a program verification operation. The erase loop may include anerase operation and an erase verification operation.

In example embodiments, the control circuit 500 may generate the controlsignals CTLs, which are used for controlling the voltage generator 700,may generate the first control signal LTC1 for controlling the rowdecoder 600 and may generate the second control signal LTC2 forcontrolling the page buffer circuit 410, based on the command signalCMD. The control circuit 500 may generate the row address R_ADDR and thecolumn address C_ADDR based on the address signal ADDR. The controlcircuit 500 may provide the row address R_ADDR to the row decoder 600and provide the column address C_ADDR to the data input/output circuit420. The control circuit 500 may include the decision circuit 520 todetermine an operation mode based on a number of mats which operatesimultaneously. A concept of plane may be used instead of a concept ofthe mat.

The row decoder 600 may be coupled to the memory cell array 100 throughthe string selection line SSL, the plurality of word-lines WLs, and theground selection line GSL. During the program operation or the readoperation, the row decoder 600 may determine one of the plurality ofword-lines WLs as the selected word-line and determine rest of theplurality of word-lines WLs except for the selected word-line asunselected word-lines based on the row address R_ADDR.

The voltage generator 700 may generate word-line voltages VWLs, whichare required for the operation of the memory cell array 100 of thenonvolatile memory device 30, based on the control signals CTLs. Thevoltage generator 700 may receive the power PWR from the memorycontroller 20. The word-line voltages VWLs may be applied to theplurality of word-lines WLs through the row decoder 600. The voltagegenerator 700 may also generate a string selection voltage and a groundselection voltage, which are required for the operation of the memorycell array 100 of the nonvolatile memory device 30, based on the controlsignals CTLs. The string selection voltage and the ground selectionvoltage may be applied to the string selection line SSL and the groundselection line GSL, respectively through the row decoder 600.

For example, during the erase operation, the voltage generator 700 mayapply an erase voltage to a well of a memory block and may apply aground voltage to entire word-lines of the memory block. During theerase verification operation, the voltage generator 700 may apply anerase verification voltage to the entire word-lines of the memory blockor sequentially apply the erase verification voltage to word-lines in aword-line basis.

For example, during the program operation, the voltage generator 700 mayapply a program voltage to the selected word-line and may apply aprogram pass voltage to the unselected word-lines. In addition, duringthe program verification operation, the voltage generator 700 may applya program verification voltage to the selected word-line and may apply averification pass voltage to the unselected word-lines.

In addition, during the read operation, the voltage generator 700 mayapply a read voltage to the selected word-line and may apply a read passvoltage to the unselected word-lines.

The page buffer circuit 410 may be coupled to the memory cell array 100through the plurality of bit-lines BLs. The page buffer circuit 410 mayinclude a plurality of page buffers. In some exemplary embodiments, onepage buffer may be connected to one bit-line. In other exemplaryembodiments, one page buffer may be connected to two or more bit-lines.

The page buffer circuit 410 may temporarily store data to be programmedin a selected page or data read out from the selected page of the memorycell array 100.

The data input/output circuit 420 may be coupled to the page buffercircuit 410 through data lines DLs. During the program operation, thedata input/output circuit 410 may receive program data DATA from thememory controller 20 and provide the program data DATA to the pagebuffer circuit 410 based on the column address C_ADDR received from thecontrol circuit 500. During the read operation, the data input/outputcircuit 420 may provide read data DATA, which are stored in the pagebuffer circuit 410, to the memory controller 20 based on the columnaddress C_ADDR received from the control circuit 500.

In addition, the page buffer circuit 410 and the data input/outputcircuit 420 read data from a first area of the memory cell array 100 andwrite the read data to a second area of the memory cell array 100. Thatis, the page buffer circuit 410 and the data input/output circuit 420may perform a copy-back operation.

FIG. 7 is a block diagram illustrating the control circuit in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

Referring to FIG. 7, the control circuit 500 includes a command decoder510, a decision circuit 520, an address buffer 530, a control signalgenerator 540, a first level/timing controller 550 and a secondlevel/timing controller 560.

The command decoder 510 decodes the command CMD and provides a decodedcommand D_CMD to the control signal generator 540. The address buffer530 receives the address signal ADDR, provides the row address R_ADDR tothe row decoder 600 and provides the column address C_ADDR to the datainput/output circuit 420.

The decision circuit 520 receives the command CMD and generates a modesignal MS designating one of a single mat mode and a multi-mat mode inresponse to the command CMD. An operation of the nonvolatile memorydevice is performed on one of the plurality of mats in the single matmode, and an operation of the nonvolatile memory device issimultaneously performed on at least two mats of the plurality of matsin the multi-mat mode. The single mat mode may be also referred to as asingle plane mode or a single speed mode. The multi-mat mode may be alsoreferred to as a multi-plane mode or a multi-speed mode. The decisioncircuit 520 provides the mode signal MS to the control signal generator540, the first level/timing controller 550 and the second level/timingcontroller 560.

The control signal generator 540 receives the decoded command D_CMD andthe mode signal MS, generates the control signals CTLs based on anoperation directed by the decoded command D_CMD and an operation modedirected by the mode signal MS and provides the control signals CTLs tothe voltage generator 700.

The first level/timing controller 550 receives the mode signal MS,generates the first control signal LTC1 based on the mode designated bythe mode signal MS, provides the first control signal LTC1 to the rowdecoder 600. The first level/timing controller 550 receives settinginformation on levels of the word-line voltages and application timeinterval of the word-line voltages for the single mat mode and themulti-mat mode as a command set CMDSET from the memory controller 20 andstores the command set CMDSET therein. The first level/timing controller550 provides the row decoder 600 with the first control signal LTC1indicating the setting information of the word-line voltages in responseto the mode signal MS.

The second level/timing controller 560 receives the mode signal MS,generates the second control signal LTC2 based on the mode designated bythe mode signal MS, provides the second control signal LTC2 to the pagebuffer circuit 410. The second level/timing controller 560 receivessetting information on levels of voltages applied to the bit-lines(i.e., bit-line voltages) and application time interval of the bit-linevoltages for the single mat mode and the multi-mat mode as the commandset CMDSET from the memory controller 20 and stores the command setCMDSET therein. The second level/timing controller 560 provides the pagebuffer circuit 410 with the second control signal LTC2 indicating thesetting information of the bit-line voltages in response to the modesignal MS.

FIG. 8 is a block diagram illustrating the voltage generator in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

Referring to FIG. 8, the voltage generator 700 may include a highvoltage generator 710 and a low voltage generator 730. The voltagegenerator 700 may further include a negative voltage generator 750.

The high voltage generator 710 may generate a program voltage VPGM, aprogram pass voltage VPPASS, a verification pass voltage VVPASS, a readpass voltage VRPASS and an erase voltage VERS according to operationsdirected by the decoded command D_CMD, in response to a first controlsignal CTL1 of the control signals CTLs.

Levels of the program voltage VPGM, the program pass voltage VPPASS, theverification pass voltage VVPASS, the read pass voltage VRPASS may bedifferent in the single mat mode and the multi-mat mode. The programvoltage VPGM is applied to the selected word-line, the program passvoltage VPPASS, the verification pass voltage VVPASS, the read passvoltage VRPASS may be applied to the unselected word-lines and the erasevoltage VERS may be applied to the well of the memory block. The firstcontrol signal CTL1 may include a plurality of bits which indicate theoperations directed by the decoded command D_CMD and the mode designatedby the mode signal MS.

The low voltage generator 730 may generate a program verificationvoltage VPV, a read voltage VRD and an erase verification voltage VEVaccording to operations directed by the decoded command D_CMD, inresponse to a second control signal CTL2 of the control signals CTLs.Levels of the program verification voltage VPV, the read voltage VRD andthe erase verification voltage VEV may be different in the single matmode and the multi-mat mode. The program verification voltage VPV, theread voltage VRD and the erase verification voltage VEV may be appliedto the selected word-line according to operation of the nonvolatilememory device 30. The second control signal CTL2 may include a pluralityof bits which indicate the operations directed by the decoded commandD_CMD and the mode designated by the mode signal MS.

The negative voltage generator 750 may generate a program verificationvoltage VPV′, a read voltage VRD′ and an erase verification voltage VEV′which have negative levels according to operations directed by thedecoded command D_CMD, in response to a third control signal CTL3 of thecontrol signals CTLs. Levels of the program verification voltage VPV′,the read voltage VRD′ and the erase verification voltage VEV′ may bedifferent in the single mat mode and the multi-mat mode. The thirdcontrol signal CTL3 may include a plurality of bits which indicate theoperations directed by the decoded command D_CMD and the mode designatedby the mode signal MS.

Although not illustrated, the voltage generator 700 may generate othervoltages that will be described in FIGS. 15 and 17.

FIG. 9 is a block diagram illustrating the row decoder in thenonvolatile memory device of FIG. 3 according to exemplary embodiments.

In FIG. 9, the first mat MAT1 and the second mat MAT2 of the memory cellarray 100 and the voltage generator 700 are altogether illustrated.

Referring to FIG. 9, the row decoder 600 includes a decoder 610, a firstswitch circuit 620 and a second switch circuit 630.

The decoder 610 receives the address ADDR and the mode signal MS, andgenerates a first mat selection signal MSS1 to select the first mat MAT1and a second mat selection signal MSS2 to select the second mat MAT2based on at least one mat designated by the address ADDR and the modedesignated by the mode signal MS. When the mode signal MS indicates thesingle mat mode, the decoder 610 enables one of the first mat selectionsignal MSS1 and the second mat selection signal MSS2. When the modesignal MS indicates the multi-mat mode, the decoder 610 enables both thefirst mat selection signal MSS1 and the second mat selection signalMSS2. The decoder 610 provides the first mat selection signal MSS1 andthe second mat selection signal MSS2 to the first mat MAT1 and thesecond mat MAT2 respectively.

The first switch circuit 620 and the second switch circuit 630 may becoupled to a plurality of selection lines Sls coupled to the voltagegenerator 700. The first switch circuit 620 is coupled to the first matMAT1 through at least one string selection line SSL, a plurality ofword-lines WL1˜WLn and at least one ground selection line GSL. Thesecond switch circuit 630 is coupled to the second mat MAT2 through atleast one string selection line SSL, a plurality of word-lines WL1˜WLnand at least one ground selection line GSL.

The first switch circuit 620 includes a switch controller 621 and aplurality of pass transistors PT11˜PT14 coupled to the string selectionline SSL, the word-lines WL1˜WLn and the ground selection line GSL ofthe first mat MAT1. The switch controller 621 may control turn-on andturn-off of the pass transistors PT11˜PT14 and turn-on timing of thepass transistors PT11˜PT14 in response to the first mat selection signalMSS1 and the first control signal LTC1. For example, the switchcontroller 621 may control turn-on timing (e.g., a time interval) of thepass transistors PT11˜PT14 by selecting a particular time interval fromamong a plurality of different time intervals in response to the firstmat selection signal MSS1 and the first control signal LTC1.

The second switch circuit 630 includes a switch controller 631 and aplurality of pass transistors PT21˜PT24 coupled to the string selectionline SSL, the word-lines WL1˜WLn and the ground selection line GSL ofthe second mat MAT2. The switch controller 631 may control turn-on andturn-off of the pass transistors PT21˜PT24 and turn-on timing of thepass transistors PT21˜PT24 in response to the second mat selectionsignal MSS2 and the first control signal LTC1. For example, the switchcontroller 631 may control turn-on timing (e.g., a time interval) of thepass transistors PT21˜PT24 by selecting a particular time interval fromamong a plurality of different time intervals in response to the secondmat selection signal MSS2 and the first control signal LTC1.

When the mode signal MS indicates the single mat mode and the addressADDR designates the first mat MAT1, the first mat selection signal MSS1is enabled and the second mat selection signal MSS2 is disabled. Theswitch controller 621 enables a first switching control signal SCS1during a first time interval (or, a first period of time) to turn-on thepass transistors PT11˜PT14 during the first time in response to thefirst control signal LCT1. Therefore, the word-line voltages VWLs havingfirst levels are applied to the first mat MAT1.

When the mode signal MS indicates a first sub mode of the multi-matmode, the first and second mat selection signals MSS1 and MSS2 areenabled. The switch controller 621 enables a first switching controlsignal SCS1 during a first time interval to turn-on the pass transistorsPT11˜PT14 during the first time interval in response to the firstcontrol signal LCT1 and the switch controller 631 enables a secondswitching control signal SCS2 during the first time interval to turn-onthe pass transistors PT21˜PT24 during the first time interval inresponse to the first control signal LCT1. In example embodiments,voltage generator 700 may generate the word-line voltages VWLs inresponse to the control signals CTLs. In other example embodiments, thevoltage generator 700 may generate the word-line voltages VWLs inresponse to the control signals CTLs and the first control signal LTC1.In this case, the voltage generator 700 may generate the word-linevoltages VWLs by selecting one of different voltages in response to thecontrol signals CTLs and the first control signal LTC1. For example, theword-line voltages VWLs having second levels greater than the firstlevels are applied to the first mat MAT1 and the second mat MAT2.

When the mode signal MS indicates a second sub mode of the multi-matmode, the first and second mat selection signals MSS1 and MSS2 areenabled. The switch controller 621 enables a first switching controlsignal SCS1 during a second time interval longer than the first timeinterval to turn-on the pass transistors PT11˜PT14 during the secondtime interval in response to the first control signal LCT1 and theswitch controller 631 enables a second switching control signal SCS2during the second time interval to turn-on the pass transistorsPT21˜PT24 during the second time interval in response to the firstcontrol signal LCT1. For example, the word-line voltages VWLs having thefirst levels are applied to the first mat MAT1 and the second mat MAT2.

In example embodiments, each of the first mat MAT1 and the second matMAT2 may have an associated row decoder for applying word-line voltagesto the word-lines. Thus, each of the first mat MAT1 and the second matMAT2 can be operated separately from each other or simultaneouslytogether based on the mode signal MS, the control signals CTLs, thefirst control signal LTC1, and the second control signal LTC2.

The word-line voltages VWLs may be transferred to the plurality ofword-lines WLs and at least one of the string selection line SSL throughthe plurality of signal lines Sls.

FIGS. 10 and 11 illustrate the word-line voltages or the bit-linevoltages in the single mat mode and the multi-mat mode respectively,according to exemplary embodiments.

In FIG. 10, a reference numeral 641 represents one of the word-linevoltages or one of the bit-line voltages in the single mat mode and areference numeral 642 represents one of the word-line voltages or one ofthe bit-line voltages in the multi-mat mode. The level of the word-linevoltage or the bit-line voltage in the multi-mat mode is higher than thelevel of the word-line voltage or the bit-line voltage in the single matmode after a reference numeral 643. The reference numeral 643 mayindicate that sensing timing is same for the single mat mode and themulti-mat mode.

Although not illustrated, the level of the word-line voltage or thebit-line voltage in the multi-mat mode may be lower than the level ofthe word-line voltage or the bit-line voltage in the single mat mode.

In FIG. 11, a reference numeral 651 represents one of the word-linevoltages or one of the bit-line voltages in the single mat mode and areference numeral 652 represents one of the word-line voltages or one ofthe bit-line voltages in the multi-mat mode. Application time intervalof the word-line voltage or the bit-line voltage in the multi-mat modemay be longer than the application time interval of the word-linevoltage or the bit-line voltage in the single mat mode. In this case,the applied voltage (word-line voltage or bit-line voltage) is the samein the single mat mode and the multi-mat mode. A reference numeral 653may indicate that sensing time for the single mat mode and a referencenumeral 654 for the multi-mat mode. The reference numerals 653 and 654indicate that sensing timings are different for the single mat mode andthe multi-mat mode. Although not illustrated, the application timeinterval of the word-line voltage or the bit-line voltage in themulti-mat mode may be shorter than the application time interval of theword-line voltage or the bit-line voltage in the single mat mode.

Although a voltage level of the word-line voltage may be different froma voltage level of the bit-line voltage, a difference between thevoltage levels of the word-line voltage and the bit-line voltage is notshown in FIGS. 10 and 11 for convenience in explanation.

FIG. 12 illustrates the nonvolatile memory device of FIG. 3 according toexemplary embodiments.

In FIG. 12, the first mat MAT1 of the memory cell array 100 includes afirst memory cell MC1 coupled to a word-line WL1 and a bit-line BL1 andthe second mat MAT2 of the memory cell array 100 includes a secondmemory cell MC2 coupled to the word-line WL1 and a bit-line BL2. Thefirst memory cell MC1 is coupled to a selection line Sl through a passtransistor PT1 receiving the first switching control signal SCS1 and thesecond memory cell MC2 is coupled to the selection line Sl through apass transistor PT2 receiving the second switching control signal SCS2.

The bit-line BL1 is coupled to a page buffer PB1, the bit-line BL2 iscoupled to a page buffer PB2 and the second level/timing controller 560generates the second control signal LTC2 and controls the page buffersPB1 and PB2 in response to the second control signal LTC2.

In example embodiments, a bit-line voltage generator (not shown) maygenerate variable bit-line voltages in response to the second controlsignal LTC2. For example, the bit-line voltage generator (not shown) maygenerate a selected bit-line voltage by selecting one of differentvoltages in response to the second control signal LTC2. The bit-linevoltage generator (not shown) may be connected to the page buffers PB1and PB2 and may apply the bit-line voltages to the page buffers PB1 andPB2. The page buffers PB1 and PB2 may apply bit-line voltages to thebit-lines BL1 and BL2.

In example embodiments, the bit-line voltage generator (not shown) maybe included in each of the page buffers PB1 and PB2, or disposedseparately from the page buffers PB1 and PB2.

In example embodiments, each of the page buffers PB1 and PB2 may apply abit-line voltage to the selected bit-line during a selected timeinterval from among a plurality of different time intervals in responseto the mode signal MS and the second control signal LTC2

In example embodiments, each of the first mat MAT1 and the second matMAT2 may have an associated page buffer for applying bit-line voltagesto the bit-lines. Thus, each of the first mat MAT1 and the second matMAT2 can be operated separately from each other or simultaneouslytogether based on the mode signal MS and the second control signal LTC2.

FIG. 13 is a timing diagram illustrating the word-line voltages and thebit-line voltages applied to the first and second mats in the single matmode and the multi-mat mode in FIG. 6 when a read operation is performedon the nonvolatile memory device of FIG. 3, according to exemplaryembodiments.

Referring to FIGS. 3 through 13, when the read operation is performed onthe nonvolatile memory device 30, a string selection voltage VSSSL isapplied to a selected string selection line SEL_SSL during first throughfifth intervals P11˜P15, a first pre-pulse PREP1 is applied to anunselected string selection line UNSEL_SSL during the first intervalP11, the unselected string selection line UNSEL_SSL is discharged with aground voltage during the second through fourth intervals P12˜P14 and afirst post pulse PSTP1 is applied to the unselected string selectionline UNSEL_SSL during the fifth interval P15.

In addition, a second pre-pulse PREP2 is applied to a selected word-lineSEL_WL during the first interval P11, the read voltage VR is applied tothe selected word-line SEL_WL during the second through fourth intervalsP12˜P14 and a second post pulse PSTP2 is applied to the selectedword-line SEL_WL during the fifth interval P15. A read pass voltageVRPASS is applied to an unselected word-line UNSEL_WL during the firstthrough fifth intervals P11˜P15.

The bit-line BL is set-up during the first interval P11, is prechargedby receiving a precharge voltage VPCH during the second interval P12, isdeveloped during the third interval P13, is clamped with a voltage VCMPduring the third and fourth intervals P13 and P14, and is dischargedwith the ground voltage during the fifth interval P15.

FIG. 14 illustrates that one of the word-line voltages or one of thebit-line voltages in the single mat mode is over-driven in the multi-matmode, according to exemplary embodiments.

In FIG. 14, a reference numeral 660 represents one of the word-linevoltages or one of the bit-line voltages in the single mat mode and areference numeral 670 represents one of the word-line voltages or one ofthe bit-line voltages in the multi-mat mode. The voltage level isover-driven by an amount OD and then reduced to the voltage level of thesingle mat mode in the multi-mat mode. Over-driving the voltage levelsmay mean that the voltage levels are different in the single mat modeand the multi-mat mode and over-driving the voltage levels may beapplicable to overall program operation in addition to the readoperation.

FIG. 15 is a table illustrating setting values of levels and applicationtime interval of the word-line voltages and the bit-line voltagesapplied to the first second mats in FIGS. 13 and 14 when a readoperation is performed on the nonvolatile memory device of FIG. 3,according to exemplary embodiments.

Referring to FIG. 15, when the read operation is performed on thenonvolatile memory device 30, it is noted that the setting values oflevels and application time interval of the word-line voltages and thebit-line voltages in the single mat mode are smaller than the settingvalues of levels and application time interval of the word-line voltagesand the bit-line voltages in the multi-mat mode.

The setting values in FIG. 15 may be stored as the command set CMDSET inthe first level/timing controller 550 and the second level/timingcontroller 560 in FIG. 7. In addition, the setting values in FIG. 15 maybe stored based on information which is predetermined in the nonvolatilememory device 30. The first level/timing controller 550 and the secondlevel/timing controller 560 may control the row decoder 600 and the pagebuffer circuit 410 respectively by referring the setting values suchthat at least one of the voltage levels and the application timeinterval are different in the single mat mode and the multi-mat mode.

For example, a level of the second pre-pulse PREP2 applied to a selectedword-line SEL_WL may be 5.3V in the single mat mode and may be 5.5V inthe multi-mat mode, during a specific period of time (e.g., the firstinterval P11). As another example, the second pre-pulse PREP2 having aparticular voltage (e.g., 5.3V) may be applied during 8 us in the singlemat mode and may be applied during 8.2 us in the multi-mat mode.

Although not illustrated, in exemplary embodiments, that the settingvalues of levels and application time interval of the word-line voltagesand the bit-line voltages in the single mat mode are greater than thesetting values of levels and application time interval of the word-linevoltages and the bit-line voltages in the multi-mat mode.

FIG. 16 is a timing diagram illustrating the word-line voltages and thebit-line voltages applied to the first and second mats in the single matmode and the multi-mat mode in FIG. 6 when a program operation isperformed on the nonvolatile memory device of FIG. 3, according toexemplary embodiments.

Referring to FIGS. 3 through 12 and 16, when the program operation isperformed on the nonvolatile memory device 30, a word-line set-upvoltage VWSTP is applied to a selected word-line SEL_WL during a firstinterval P21, a program pass voltage VPPASS1 and a program voltage VPGMare sequentially applied to the selected word-line SEL_WL during asecond interval P22 and a program verification voltage VPV is applied tothe selected word-line SEL_WL during a third interval P23 to verifywhether the program operation is properly performed.

A ground voltage GND is applied to an unselected word-line UNSEL_WLduring the first interval P21 to discharge the unselected word-lineUNSEL_WL, a program pass voltage VPPASS2 is applied to the unselectedword-line UNSEL_WL during the second interval P22 and a read passvoltage VRPASS is applied to the unselected word-line UNSEL_WL duringthe second interval P23.

The bit-line BL is set-up by receiving the bit-line set-up voltage VBSTPduring the first and intervals P21 and P22, is precharged by receiving aprecharge voltage VPCH during the third interval P23, and is dischargedafter the third interval P23.

FIG. 17 is a table illustrating setting values of levels and applicationtime interval of the word-line voltages and the bit-line voltagesapplied to the first and second mats in FIG. 16 when the programoperation is performed on the nonvolatile memory device of FIG. 3,according to exemplary embodiments.

Referring to FIG. 17, when the program operation is performed on thenonvolatile memory device 30, it is noted that the setting values oflevels and application time interval of the word-line voltages and thebit-line voltages in the single mat mode are smaller than the settingvalues of levels and application time interval of the word-line voltagesand the bit-line voltages in the multi-mat mode.

The setting values in FIG. 17 may be stored as the command set CMDSET inthe first level/timing controller 550 and the second level/timingcontroller 560 in FIG. 7. The first level/timing controller 550 and thesecond level/timing controller 560 may control the row decoder 600 andthe page buffer circuit 410 respectively by referring the setting valuessuch that at least one of the voltage levels and the application timeinterval are different in the single mat mode and the multi-mat mode.

FIG. 15 illustrates the setting values of levels and application timeinterval of the word-line voltages and the bit-line voltages in thesingle mat mode and the multi-mat mode during the read operation on thenonvolatile memory device 30 and FIG. 17 illustrates the setting valuesof levels and application time interval of the word-line voltages andthe bit-line voltages in the single mat mode and the multi-mat modeduring the program operation on the nonvolatile memory device 30.

Although not illustrated, levels and application time interval of theerase voltage applied to the well of the memory block in the eraseoperation and levels and application time interval of the eraseverification voltage in the erase verification operation may bedifferent in the single mat mode and the multi-mat mode. Setting valuesof the erase voltage and the erase verification voltage may be stored asthe command set CMDSET in the first level/timing controller 550 and thesecond level/timing controller 560.

The operation on the nonvolatile memory device 30 may include one of theprogram operation, the read operation and the erase operation.

FIG. 18 is a block diagram illustrating a memory system according toexemplary embodiments.

Referring to FIG. 18, a memory system (or, a nonvolatile memory system)15 may include a memory controller 25 and at least one nonvolatilememory device 35.

The memory system 15 of FIG. 18 differs from the memory system ofFIG. 1. The nonvolatile memory device 30 includes the decision circuit520 in FIG. 1 while the memory controller 25 includes a decision circuit27.

When the memory controller 25 includes the decision circuit 27, acontrol circuit such as the control circuit 500 of FIG. 7, which may beincluded in the nonvolatile memory device 35, may include components ofthe control circuit 500 except the decision circuit 520.

The decision circuit 27 determines a number of mats of the mats MAT1 andMAT2, which operate simultaneously, and transmits the command CMD or thecontrol signal CTRL including a mode signal indicating the number ofmats which operate simultaneously to the nonvolatile memory device 35.

For example, when the decision circuit 27 determines a single mat modeor a multi-mat mode of the mats MAT1 and MAT2, the decision circuit 27may transmit, to the nonvolatile memory device 35, levels and anapplication time interval of the word-line voltages or levels and anapplication time interval of the bit-line voltages applied to thebit-lines as a command set before the decision circuit transmit 25, tothe nonvolatile memory device 35, a command sequence designating one ofthe single mat mode and the multi-mat mode.

For example, when the decision circuit 27 determines the single mat modeor the multi-mat mode of the mats MAT1 and MAT2, the decision circuit 27may transmit, to the nonvolatile memory device 35, the levels and anapplication time interval of the word-line voltages or the levels and anapplication time interval of voltages of the bit-lines as a command setwith the mode signal designating one of the single mat mode and themulti-mat mode. The command set of the setting values may be included inthe command sequence transmitted to the nonvolatile memory device 35.

FIG. 19 is a flow chart illustrating a method of nonvolatile memorydevice according to exemplary embodiments.

Referring to FIG. 1 through 19, in a method of operating a nonvolatilememory device 30 including a memory cell array including a plurality ofmats corresponding to different bit-lines, the nonvolatile memory device30 receives a command CMD and an address ADDR from a memory controller20 (S810).

A decision circuit 520 of a control circuit 500 determines an operationmode to one of a single mat mode and a multi-mat mode in response to thecommand CMD (S820).

The decision circuit 520 provides first and second level/timingcontrollers 550 and 560 with a mode signal MS designating one of thesingle mat mode and the multi-mat mode to control the row decoder 600and the page buffer circuit 410 such that at least one of levels of theword-line voltages or the bit-line voltages and an application timeinterval of the word-line voltages or the bit-line voltages aredifferent in the single mat mode and the multi-mat mode (S830).

In a nonvolatile memory device, a memory system and a method of anonvolatile memory device according to exemplary embodiments, levels orapplication time intervals of the voltages applied to the memory cellarray are differentiated in the single mat mode and the multi-mat mode,and performance in both the single mat mode and the multi-mat mode maybe enhanced.

FIG. 20 is a block diagram illustrating a solid state disk or solidstate drive (SSD) according to exemplary embodiments.

Referring to FIG. 20, an SSD 1000 includes multiple nonvolatile memorydevices 1100 and an SSD controller 1200.

The nonvolatile memory devices 1100 may be optionally supplied with anexternal high voltage VPP. Each of the nonvolatile memory devices 1100may employ the nonvolatile memory device 30 of FIG. 3. Each of thenonvolatile memory devices 1100 may differentiate levels or applicationtime intervals of the voltages applied to the word-lines and bit-linesof the memory cell array in the single mat mode and in the multi-matmode

The SSD controller 1200 is connected to the nonvolatile memory devices1100 through multiple channels CH1 to CHi. The SSD controller 1200includes one or more processors 1210, a buffer memory 1220, an ECC block1230, a host interface 1250, and a nonvolatile memory interface 1260.The buffer memory 1220 stores data used to drive the SSD controller1200.

The buffer memory 1220 includes multiple memory lines each storing dataor a command.

The ECC block 1230 calculates error correction code values of data to beprogrammed at a writing operation and corrects an error of read datausing an error correction code value at a read operation.

A nonvolatile memory device or a storage device according to anembodiment of the inventive concept may be packaged using variouspackage types or package configurations

The present disclosure may be applied to various electronic devicesincluding a nonvolatile memory device. For example, the presentdisclosure may be applied to systems such as be a mobile phone, a smartphone, a personal digital assistant (PDA), a portable multimedia player(PMP), a digital camera, a camcorder, personal computer (PC), a servercomputer, a workstation, a laptop computer, a digital TV, a set-top box,a portable game console, a navigation system, etc.

The foregoing is illustrative of exemplary embodiments and is not to beconstrued as limiting thereof. Although a few exemplary embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the exemplary embodiments withoutmaterially departing from the novel teachings and advantages of thepresent disclosure. Accordingly, all such modifications are intended tobe included within the scope of the present disclosure as defined in theclaims. Therefore, it is to be understood that the foregoing isillustrative of various exemplary embodiments and is not to be construedas limited to the specific exemplary embodiments disclosed, and thatmodifications to the disclosed exemplary embodiments, as well as otherexemplary embodiments, are intended to be included within the scope ofthe appended claims.

1. A nonvolatile memory device comprising: a memory cell array includinga plurality of mats corresponding to different bit-lines, each of theplurality of mats including a plurality of memory blocks and each of theplurality of memory blocks including a plurality of cell stringsconnected to a plurality of word-lines and a plurality of bit-lines; avoltage generator configured to generate word-line voltages; a pagebuffer circuit coupled to the memory cell array through the bit-linesand configured to provide bit-line voltages to the bit-lines; a rowdecoder configured to transfer the word-line voltages to the pluralityof word-lines; and a control circuit configured to control the voltagegenerator, the row decoder and the page buffer circuit based on acommand and an address from an outside of the nonvolatile memory device,wherein the control circuit is configured to select different voltagesto apply the selected different voltages to at least one of theword-lines or at least one of the bit-lines according to a number ofmats of the plurality of mats, which operate simultaneously.
 2. Thenonvolatile memory device of claim 1, wherein the plurality of matsinclude a first mat and a second mat, and wherein each of the cellstrings includes at least one ground selection transistor, a pluralityof memory cells, and at least one string selection transistor coupled inseries.
 3. The nonvolatile memory device of claim 2, wherein the controlcircuit is configured to control the row decoder and the page buffercircuit such that levels of the word-line voltages or levels of thebit-line voltages applied to the bit-lines in a single mat mode aredifferent from levels of the word-line voltages or levels of thebit-line voltages in a multi-mat mode, and wherein an operation of thenonvolatile memory device is performed on one of the first mat and thesecond mat in the single mat mode, and an operation of the nonvolatilememory device is simultaneously performed on the first mat and thesecond mat in the multi-mat mode.
 4. The nonvolatile memory device ofclaim 3, wherein the control circuit is configured to control the rowdecoder such that the levels of the word-line voltages in the single matmode are smaller than the levels of the word-line voltages in themulti-mat mode.
 5. The nonvolatile memory device of claim 3, wherein thecontrol circuit is configured to control the row decoder such that thelevels of the word-line voltages in the single mat mode are greater thanthe levels of the word-line voltages in the multi-mat mode.
 6. Thenonvolatile memory device of claim 3, wherein the control circuit isconfigured to control the page buffer circuit such that the levels ofthe bit-line voltages in the single mat mode are greater than the levelsof the bit-line voltages in the multi-mat mode.
 7. The nonvolatilememory device of claim 3, wherein the control circuit is configured tocontrol the page buffer circuit such that the levels of the bit-linevoltages in the single mat mode are smaller than the levels of thebit-line voltages in the multi-mat mode.
 8. The nonvolatile memorydevice of claim 2, wherein the control circuit comprises: a decisioncircuit configured to generate a mode signal designating one of a singlemat mode and a multi-mat mode in response to the command, wherein anoperation of the nonvolatile memory device is performed on one of thefirst mat and the second mat in the single mat mode, and an operation ofthe nonvolatile memory device is simultaneously performed on the firstmat and the second mat in the multi-mat mode; a first level/timingcontroller configured to generate a first control signal to control therow decoder according to the single mat mode or the multi-mat mode inresponse to the mode signal; and a second level/timing controllerconfigured to generate a second control signal to control the pagebuffer circuit according to the single mat mode or the multi-mat mode inresponse to the mode signal.
 9. The nonvolatile memory device of claim8, wherein the first level/timing controller is configured to storelevels of the word-line voltages for each of a program operation, a readoperation and an erase operation on the memory cell array as a firstcommand set in each of single mat mode and the multi-mat mode, andwherein the second level/timing controller is configured to store levelsof bit-line voltages applied to the bit-lines for each of the programoperation, the read operation and the erase operation on the memory cellarray as a second command set in each of single mat mode and themulti-mat mode.
 10. The nonvolatile memory device of claim 8, whereinthe row decoder comprises: a decoder configured to generate a first matselection signal to select the first mat and a second mat selectionsignal to select the second mat in response to the address and the modesignal; a first switch circuit coupled to the first mat and a pluralityof selection lines coupled to the voltage generator; and a second switchcircuit coupled to the second mat and the plurality of selection lines.11. The nonvolatile memory device of claim 10, wherein the first switchcircuit comprises: a plurality of pass transistors coupled to the firstmat through at least one string selection line, a plurality ofword-lines and at least one ground selection line; and a switchcontroller configured to generate switching control signals to controlturn-on and turn-off of the pass transistors in response to the firstmat selection signal and the first control signal.
 12. The nonvolatilememory device of claim 1, wherein each of the memory blocks includes theplurality of cell strings disposed perpendicular to a substrate, andeach of the cell strings includes at least one ground selectiontransistor, a plurality of memory cells, and at least one stringselection transistor stacked in a direction perpendicular to thesubstrate. 13-16. (canceled)
 17. A memory system comprising: at leastone nonvolatile memory device; and a memory controller configured tocontrol the at least one nonvolatile memory device, wherein the at leastone nonvolatile memory device comprises: a memory cell array including aplurality of mats corresponding to different bit-lines, each of theplurality of mats including a plurality of memory blocks and each of theplurality of memory blocks including a plurality of cell stringsconnected to a plurality of word-lines and a plurality of bit-lines; avoltage generator configured to generate word-line voltages; a pagebuffer circuit coupled to the memory cell array through the bit-linesand configured to provide bit-line voltages to the bit-lines; a rowdecoder configured to transfer the word-line voltages to the pluralityof word-lines; and a control circuit configured to control the voltagegenerator, the row decoder and the page buffer circuit based on acommand and an address from the memory controller, wherein the controlcircuit is configured to apply different voltages to at least one of theword-lines or at least one of the bit-lines, or configured to control atime interval during which voltages applied to at least one of theword-lines or at least one of the bit-lines are applied according to anumber of mats of the plurality of mats, which operate simultaneously,and wherein the memory controller includes a decision circuit configuredto determine the number of the mats which operate simultaneously. 18.The memory system of claim 17, wherein the plurality of mats include atleast a first mat and a second mat, wherein the decision circuit isconfigured to transmit, to the nonvolatile memory device, levels and anapplication time interval of the word-line voltages or levels and anapplication time interval of bit-line line voltages applied to thebit-lines as a command set before the decision circuit transmits, to thenonvolatile memory device, a command sequence designating one of asingle mat mode and a multi-mat mode, and wherein an operation of thenonvolatile memory device is performed on one of the first mat and thesecond mat in the single mat mode, and an operation of the nonvolatilememory device is simultaneously performed on the first mat and thesecond mat in the multi-mat mode.
 19. The memory system of claim 17,wherein the plurality of mats include at least a first mat and a secondmat, wherein the decision circuit is configured to transmit, to thenonvolatile memory device, levels and an application time interval ofthe word-line voltages or levels and an application time interval ofbit-line line voltages applied to the bit-lines as a command set with acommand sequence designating one of a single mat mode and a multi-matmode, and wherein a memory operation is performed on one of the firstmat and the second mat in the single mat mode, and a memory operation issimultaneously performed on the first mat and the second mat in themulti-mat mode.
 20. The memory system of claim 17, wherein the controlcircuit is configured to control the voltage generator, the row decoderand the page buffer circuit such that an operation of the nonvolatilememory device is performed on at least some of the plurality of mats.21. A nonvolatile memory device comprising: a memory cell arrayincluding a plurality of planes, each of first and second planes of theplanes including a plurality of memory blocks, each of the memory blocksincluding a plurality of cell strings, a first cell string of the cellstrings of the first plane connected to a plurality of first word-linesand a first bit-line, and a second cell string of the cell strings ofthe second plane connected to a plurality of second word-lines and asecond bit-line; a voltage generator connected to the plurality of firstand second word-lines and configured to apply word-line voltages to theplurality of first and second word-lines; and a control circuitconfigured to control at least one of the word-line voltages applied toat least one of the word-lines based on whether one or both planes ofthe first and second planes operate simultaneously, wherein the controlcircuit is configured to control the word-line voltages by: eitherapplying a first voltage, for a first specific period of time, to atleast one word-line of the plurality of first and second word-lines whenonly one of the first and second planes operates and applying a secondvoltage different from the first voltage, for the first specific periodof time, to the at least one word-line when both of the first and secondplanes simultaneously operate, or applying a first voltage to at leastone word-line of the plurality of first and second word-lines for afirst period of time when only one of the first and second planesoperates and applying the first voltage to the at least one word-linefor a second period of time different from the first period of time whenboth of the first and second planes simultaneously operate.
 22. Thenonvolatile memory device of claim 21, further comprising: first andsecond page buffers connected to the first bit-line and the secondbit-line respectively, and each configured to apply a bit-line voltageto each of the first and second bit-lines, wherein the control circuitis configured to control the bit-line voltage based on whether one orboth planes of the first and second planes operate simultaneously, andwherein the control circuit is configured to control the bit-linevoltage by: either applying a third voltage, for a second specificperiod of time, to at least one bit-line of the first and secondbit-lines when only one of the first and second planes operates andapplying a fourth voltage different from the third voltage, for thesecond specific period of time, to the at least one bit-line when bothof the first and second planes simultaneously operate, or applying athird voltage to at least one bit-line of the first and second bit-linesfor a third period of time when only one of the first and second planesoperates and applying the third voltage to the at least one bit-line fora fourth period of time different from the third period of time whenboth of the first and second planes simultaneously operate. 23.(canceled)
 24. The nonvolatile memory device of claim 21, wherein alevel of the second voltage is greater than a level of the firstvoltage, or wherein the second period of time is longer than the firstperiod of time.
 25. The nonvolatile memory device of claim 21, wherein alevel of the first voltage is greater than a level of the secondvoltage, or wherein the first period of time is longer than the secondperiod of time.